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PSMN1R2-25YL Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
NXP Semiconductors
PSMN1R2-25YL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
104
ID (A)
103
Limit Rdson = VDS / ID
102
DC
10
1
10-1
10-1
1
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10 us
100 us
1 ms
10 ms
100 ms
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
Min Typ Max Unit
-
0.4 1
K/W
1
Zth (j-mb)
(K/W) δ = 0.5
10-1 0.2
0.1
0.05
10-2 0.02
single shot
10-3
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P
δ = tp
T
10-4
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
1
tp (s)
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R2-25YL_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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