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| PSMN1R2-25YL Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN1R2-25YL
N-channel 25 V 1.2 m⦠logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8; see Figure 9
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
VDS = 25 V; VGS = 0 V; Tj = 25 °C
VDS = 25 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 150 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10
f = 1 MHz
ID = 25 A; VDS = 12 V; VGS = 10 V;
see Figure 12; see Figure 13
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
see Figure 12; see Figure 13
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
see Figure 12; see Figure 13
VDS = 12 V; see Figure 12
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
Min Typ Max Unit
25
-
-
V
22
-
-
V
1.3 1.7 2.15 V
0.65 -
-
V
-
-
2.45 V
-
-
1.5 µA
-
-
500 µA
-
-
100 nA
-
-
100 nA
-
1.2 1.85 mâ¦
-
-
1.6 mâ¦
-
-
2.1 mâ¦
-
0.9 1.2 mâ¦
-
0.94 -
â¦
-
105 -
nC
-
50.6 -
nC
-
19.3 -
nC
-
8.1 -
nC
-
4.5 -
nC
-
11.9 -
nC
-
2.6 -
V
-
6380 -
pF
-
1640 -
pF
-
644 -
pF
PSMN1R2-25YL_1
Product data sheet
Rev. 01 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
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