PSMN035-150B Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
4.5
4
V_GS(th)
(V)
3.5
3
2.5
2
1.5
1
0.5
0
−60 −20 20
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max
typ
min
60 100 140 180
T_j (°C)
0.14
R_DSon
(Ω)
0.12
4.4 V
4.6 V
4.8 V
0.10
5.0 V
0.08
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5.2 V
5.4 V
0.06
0.04
0.02
0
0
6.0 V
V_GS = 8 V
5
10
15
20
25
30
I_D (A)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
3.0
2.8
a
2.6
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2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−40
0
40
80 120 160
T_j (°C)
10
V_GS
(V)
8
I_D = 50 A
T_j = 25 °C
6
V_{DD = 30 V}
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V_DD = 120 V
4
2
0
0
20
40
60
80
Q_G (nC)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
PSMN035-150B_4
Product data sheet
Rev. 04 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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