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PSMN035-150B Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
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NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
120
Ider
(%)
80
03aa24
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
120
Pder
(%)
80
03aa16
40
103
ID
(A)
RDSon = VDS/ ID
102
003aaa016
tp = 10 μs
10 P
tp
d=T
tp
t
T
1
1
10
D.C.
100 μs
1 ms
10 ms
100 ms
102 VDS (V) 103
Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-source volt
102
003aaa017
IAS
25 °C
(A)
10
Tj prior to avalanche = 150 °C
0
0
50
100
150
200
Tmb (°C)
Fig 3. Normalized total power dissipation as a
function of mounting base temperature
1
10−3
10−2
10−1
1
10
tp (ms)
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration
PSMN035-150B_4
Product data sheet
Rev. 04 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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