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| PSMN035-150B Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
VDS = 150 V; VGS = 0 V; Tj = 25 °C
VDS = 150 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
ID = 50 A; VDS = 120 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 75 V; RL = 1.5 â¦; VGS = 10 V;
RG(ext) = 5.6 â¦; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
150 -
-
V
1
-
-
V
2
3
4
V
-
0.05 10
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
98
mâ¦
-
30
35
mâ¦
-
79
-
nC
-
17
-
nC
-
33
45
nC
-
4720 -
pF
-
456 -
pF
-
208 -
pF
-
25
-
ns
-
138 -
ns
-
79
-
ns
-
93
-
ns
-
0.85 1.2 V
-
118 -
ns
-
0.66 -
nC
PSMN035-150B_4
Product data sheet
Rev. 04 â 17 November 2009
© NXP B.V. 2009. All rights reserved.
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