PSMN035-150B Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
50
I_D
(A)
40
V_GS = 10 V
003aaa019
8V
6V
30
5.4 V
20
5.2 V
5V
10
4.8 V
4.6 V
0
4.4 V
0
0.4
0.8
1.2
1.6
2
V_DS (V)
50
I_D
(A)
V_DS > I_D × R_DSon
40
30
175 °C
003aaa020
20
T_j = 25 °C
10
0
0
2
4
6
8
10
V_GS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−2
I_D
(A)
10^−3
min
10^−4
10^−5
003aaa024
typ
max
50
g_fs
(S)
40
30
20
T_j = 25 °C
003aaa025
T_j = 175 °C
10^−6
10
10^−7
1
2
3
4
5
V_GS (V)
0
0
10
20
30
40
50
I_D (A)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
PSMN035-150B_4
Product data sheet
Rev. 04 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
6 of 12