PSMN008-75P Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
25
R_DSon
(m Ω)
20
T_j = 25 °C
V_GS = 5 V
15
10
5
0
0
25
50
03am81
5.5 V
10 V
75
100
I_D (A)
3
03ac63
a
2
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 75 A
T_j = 25 °C
V_DD = 60 V
03am85
10⁴
C
(pF)
03am84
C_iss
6
10³
4
C_oss
C_rss
2
0
0
50
100
150
Q_G (nC)
10²
10^−1
1
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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