PSMN008-75P Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to
mounting base
see Figure 4
thermal resistance from junction to ambient vertical in still air
1
Min Typ Max Unit
-
-
0.65 K/W
-
60
-
K/W
03am78
Z_{th(j-mb) δ = 0.5}
(K/W)
0.2
10^−1 _0.1
0.05
0.02
single pulse
P
t_p
δ=
T
Fig 4.
10^−2
10^-4
10^−3
10^−2
t_p
t
T
10^−1
1
t_p (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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