PSMN008-75P Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
100
I_D
(A)
T_j = 25 °C ^{10 V 6 V}
75
03am80
5.5 V
100
I_D
(A)
75
V_DS > I_D x R_DSon
03am82
50
5V
4.7 V
25
4.5 V
V_GS = 4.1 V
0
0
0.5
1
1.5
2
V_DS (V)
50
25
0
0
175 °C
T_j = 25 °C
2
4 _{VGS (V)} 6
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
10^−4
3
typ
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
6 of 12