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PSMN008-75P Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = 175 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = 25 °C;
see Figure 8
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 9 and 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9 and 10
ID = 75 A; VDS = 60 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 38 V; RL = 1.5 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
75
90
-
V
-
-
4.4 V
1
-
-
V
2
3
4
V
-
0.05 10
µA
-
-
500 µA
-
4
100 nA
-
4
100 nA
-
-
20
mΩ
-
6.5 8.5 mΩ
-
122.8 -
nC
-
21
-
nC
-
50
-
nC
-
5260 -
pF
-
525 -
pF
-
420 -
pF
-
18
-
ns
-
55
-
ns
-
88
-
ns
-
80
-
ns
-
0.84 1.2 V
-
70
-
ns
-
100 -
nC
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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