PHP30NQ15T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PHP30NQ15T
N-channel TrenchMOS standard level FET
40
g_fs
(S)
35
30
25
20
15
10
5
0
0
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T_j = 25 °C
T_j = 175 °C
5
10
15
20
25 30
I_D (A)
0.20
R_DSon
(Ω)
0.16
4.4 V
5.0 V
4.6 V
4.8 V
5.2 V
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0.12
5.4 V
8.0 V
0.06
6.0 V
0.04
V_GS = 10 V
0
0
5
10
15
20
25
30
I_D (A)
Fig 10. Forward transconductance as a function of
drain current; typical values
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3.0
2.8
a
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−40
0
40
80 120 160
T_j (°C)
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
14
V_GS
(V)
12
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10
V_DD = 30 V
8
6
V_DD = 120 V
4
2
0
0
10
20
30
40
50
60
Q_G (nC)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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