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PHP30NQ15T Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
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NXP Semiconductors
120
Pder
(%)
80
40
03aa16
PHP30NQ15T
N-channel TrenchMOS standard level FET
102
IAS
(A)
10
003aaa054
25 °C
Tj prior to avalanche = 150 °C
1
0
0
50
100
150
200
Tmb (°C)
10−110−3
10−2
10−1
1
10
tp (ms)
Fig 3. Normalized total power dissipation as a
function of mounting base temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 5
junction to mounting
base
thermal resistance from vertical in still air
junction to ambient
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration
Min Typ Max Unit
-
-
1
K/W
-
60
-
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10−1 0.05
0.02
10−2
Single Pulse
003aaa056
P
tp
δ= T
Fig 5.
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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