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PHP30NQ15T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
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NXP Semiconductors
PHP30NQ15T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 8
VDS = 150 V; VGS = 0 V; Tj = 25 °C
VDS = 150 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11 and 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 11 and 12
ID = 30 A; VDS = 120 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 75 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
150 -
-
V
2
3
4
V
1
-
-
V
-
0.05 10
µA
-
-
500 µA
-
0.02 100 nA
-
0.02 100 nA
-
-
176 mΩ
-
60
63
mΩ
-
55
-
nC
-
10
-
nC
-
20
27
nC
-
2390 -
pF
-
240 -
pF
-
98
-
pF
-
14
-
ns
-
50
-
ns
-
48
-
ns
-
38
-
ns
-
0.9 1.2 V
-
105 -
ns
-
0.55 -
µC
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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