PHP30NQ15T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PHP30NQ15T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 25 °C; see Figure 1 and 2
V_GS = 10 V; T_mb = 100 °C; see Figure 1
t_p ≤ 10 µs; pulsed; T_mb = 25 °C; see Figure 2
T_mb = 25 °C; see Figure 3
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C; I_D = 26 A; V_sup ≤ 25 V;
drain-source avalanche unclamped; R_GS = 50 Ω; t_p = 0.2 ms; see Figure 4
energy
I_AS
non-repetitive
V_sup ≤ 25 V; V_GS = 10 V; T_j(init) = 25 °C;
avalanche current
R_GS = 50 Ω; unclamped; see Figure 4
Min Max Unit
-
150 V
-
150 V
-20 20
V
-
29
A
-
20
A
-
116 A
-
150 W
-55 175 °C
-55 175 °C
-
29
A
-
116 A
-
502 mJ
-
29
A
120
I_der
(%)
80
40
03aa24
10³
I_D
(A)
10²
R_DSon = V_DS/ I_D
10
D.C.
1
003aaa055
t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
0
0
50
100
150
200
T_mb (°C)
10^−1
1
10
10²
10³
V_DS (V)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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