PHP30NQ15T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PHP30NQ15T
N-channel TrenchMOS standard level FET
35
I_D
(A)
30
25
20
15
10
5
0
0
003aaa057
VGS = 10 V
8V
6V
5.4 V
5.2 V
5.0 V
4.8 V
4.6 V
4.4 V
0.4
0.8
1.2
1.6
2.0
V_DS (V)
30
I_D
(A)
25
003aaa062
20
T_j = 175 °C
15
T_j = 25 °C
10
5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
4.5
4
V_GS(th)
(V)
3.5
3
2.5
2
1.5
1
0.5
0
−60 −20 20
003aaa023
max
typ
min
60 100 140 180
T_j (°C)
10^−2
I_D
(A)
10^−3
min
10^−4
10^−5
10^−6
10^−7
1
2
003aaa024
typ
max
3
4
5
V_GS (V)
Fig 8. Gate-source threshold voltage as a function of Fig 9. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP30NQ15T_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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