PHP18NQ11T Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
0.2
R_DSon
(Ω)
0.15
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4.8 5
5.2
5.4 _{Tj = 25 °C}
V_GS (V) =
0.1
6
10
0.05
0
0
4
8
I_D (A) ¹²
3
03aa29
a
2
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
6
20 V
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V_DD = 80 V
10⁴
C
(pF)
10³
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C_iss
4
2
0
0
10
20
30
Q_G (nC)
10²
10
10^-1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP18NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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