PHP18NQ11T Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
120
I_der
(%)
80
03aa24
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10²
I_D
(A)
Limit R_DSon = V_DS / I_D
10
DC
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaa591
t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
10^−1
1
10
10²
10³
V_DS (V)
Fig 3. Safe operating area: continuous and peak currents as a function of drain-source voltage
PHP18NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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