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PHP18NQ11T Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET
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NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 8
VDS = 110 V; VGS = 0 V; Tj = 25 °C
VDS = 110 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 9 A; Tj = 175 °C;
see Figure 9 and 10
VGS = 10 V; ID = 9 A; Tj = 25 °C;
see Figure 9 and 10
ID = 18 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 50 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C; ID = 18.5 A
IS = 18 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 18 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
98
-
-
V
110 -
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
0.05 10
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
-
243 mΩ
-
80
90
mΩ
-
21
-
nC
-
4
-
nC
-
8
-
nC
-
633 -
pF
-
103 -
pF
-
61
-
pF
-
6
-
ns
-
36
-
ns
-
18
-
ns
-
12
-
ns
-
0.92 1.2 V
-
55
-
ns
-
135 -
nC
PHP18NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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