PHP18NQ11T Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
20
I_D
(A)
15
V_GS = 10 V
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6V
20
I_D
(A)
15
003aaa595
10
5.4 V
5.2 V
5
5V
4.8 V
4.6 V
0
0
0.5
1
1.5
2
V_DS (V)
10
T_j = 175 °C T_j = 25 °C
5
0
0
2
4
6
8
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
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min typ max
5
V_GS(th)
(V)
4
max
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10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP18NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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