PHP18NQ11T Datasheet, PDF (4/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from in free air
junction to ambient
PHP18NQ11T
N-channel TrenchMOS standard level FET
Min Typ Max Unit
-
-
1.9 K/W
-
60
-
K/W
003aaa592
10
Z_th(j-mb)
(K/W)
1
10^−1
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
P
δ = ^tp
T
10^−2
10^−5
10^−4
10^−3
10^−2
10^−1
t_p
t
T
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP18NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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