BUK7E1R9-40E Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E1R9-40E
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
003aah027
max
10
R_DSon
5
(mΩ)
003aaj657
5.5
3
typ
2
min
1
5
6
10
0
-60
0
60
120
180
T_j (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
V_GS(V) = 20
0
0
60
120
180 _ID(A) 240
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
2
a
1.5
003aag816
1
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
BUK7E1R9-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
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