BUK7E1R9-40E Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E1R9-40E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
mb
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
123
I2PAK (SOT226)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7E1R9-40E
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_DGR
drain-gate voltage
R_GS = 20 kΩ
V_GS
gate-source voltage
T_j ≤ 175 °C; DC
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
[1]
T_mb = 100 °C; V_GS = 10 V; Fig. 1
[1]
I_DM
peak drain current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 25 °C
[1]
I_SM
peak source current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
120 A
-
120 A
-
1198 A
-
324 W
-55 175 °C
-55 175 °C
-
120 A
-
1198 A
BUK7E1R9-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
2 / 12