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| BUK7E1R9-40E Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7E1R9-40E
N-channel TrenchMOS standard level FET
104
ID
(A)
103
102
Limit RDSon= VDS / ID
003aah077
tp =10 µ s
100 µ s
10
1 ms
DC
10 ms
100 ms
1
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
Min Typ Max Unit
-
-
0.46 K/W
-
65
-
K/W
1
003aah078
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
single shot
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E1R9-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
4 / 12
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