BUK7E1R9-40E Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E1R9-40E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
I_D = 120 A; V_sup ≤ 40 V; R_GS = 50 Ω;
[2][3] -
V_GS = 10 V; T_j(init) = 25 °C; unclamped;
Fig. 3
801 mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
360
I_D
(A)
003aaj655
120
P_der
(%)
03aa16
240
80
120
40
(1)
0
0
50
100
150
200
T_mb (°C)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
10³
I_AL
(A)
10²
10
1
003aah076
(1)
(2)
(3)
10^-1
10^-3
10^-2
10^-1
1 _tAL(ms) 10
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
BUK7E1R9-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
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