BUK7E1R9-40E Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E1R9-40E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; Fig. 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.79 1.2 V
-
46
-
ns
-
62
-
nC
200
I_D
(A)
150
20 10 6
003aah079
5.5
12
R_DSon
(mΩ)
8
003aaj656
100
5
4
50
4.5
0
V_GS(V) = 4
0
0.5
1 _VDS(V) 1.5
0
0
5
10
15
20
V_GS (V)
Fig. 6.
T_j = 25 °C; t_p = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
600
I_D
(A)
400
003aah082
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
T_j = 175 °C
10^-4
200
T_j = 25 °C
10^-5
0
0
2
4
6 _VGS(V) 8
10^-6
0
2
4
6
V_GS(V)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
BUK7E1R9-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
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