BFR520.215 Datasheet, PDF (7/14 Pages) NXP Semiconductors – The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
135°
pot. unst.
region
+ 0.5
stability
circle
90°
+1
1.0
+2
45°
0.8
0.6
+ 0.2
0
180°
0.2
− 0.2
F_min = 1.1 dB
+5
0.4
Γ_OPT
0.2
0.5
1
2
5
F = 1.5 dB
0° 0
F = 2 dB
−5
F = 3 dB
−135° ^−0.5
−1
− 90°
Z_o = 50 ; V_CE = 6 V; I_C = 5 mA; f = 900 MHz.
Fig 11. Noise circle figure; f = 900 MHz.
−2
− 45°
1.0
mra716
90°
1.0
+1
135° _+0.5
+2
45°
0.8
F = 3 dB
+ 0.2
F = 2.5 dB
F = 2 dB
F_min = 1. 9 dB
0
Γ_MS
0.2
0.5 ^ΓOPT 1
2
180°
G_max = 9.3 dB
G = 9 dB
0.6
0.4
+5
0.2
5
0° 0
− 0.2
−5
G = 8 dB
− 135°
G = 7 dB
− 0.5
−2
− 45°
−1
− 90°
1.0
mra717
Z_o = 50 ; V_CE = 6 V; I_C = 5 mA; f = 2000 MHz.
Fig 12. Noise circle figure; f = 2000 MHz.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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