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| BFR520.215 Datasheet, PDF (4/14 Pages) NXP Semiconductors – The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package | |||
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NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
Table 7. Characteristics â¦continued
Tj = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
NF
noise figure
ïs = ïopt; VCE = 6 V;
Tamb = 25 ï°C
IC = 5 mA; f = 900 MHz
-
1.1
IC = 20 mA; f = 900 MHz
-
1.6
IC = 5 mA; f = 2 GHz
-
1.9
PL(1dB)
output power at IC = 20 mA; VCE = 6 V;
1 dB gain
RL = 50 ï; Tamb = 25 ï°C;
compression f = 900 MHz
-
17
ITO
third order
intercept point
[2] -
26
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
GUM
=
10
log
----------------------s---2--1-----2---------------------
ï¨1 â s11 2ï©ï¨1 â s22 2ï©
dB.
[2] IC = 20 mA; VCE = 6 V; RL = 50 ï; Tamb = 25 ï°C; fp = 900 MHz; fq = 902 MHz
Measured at f(2pïq) = 898 MHz and f(2qïp) = 904 MHz.
Max Unit
1.6
dB
2.1
dB
-
dB
-
dBm
-
dBm
400
Ptot
(mW)
300
mra702
200
100
0
0
50
100
150
200
Tsp (°C)
Fig 1. Power derating curve.
250
hFE
200
mra703
150
100
50
0
10â2
10â1
1
10
102
IC (mA)
Fig 2.
VCE = 6 V.
DC current gain as a function of collector
current.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 13 September 2011
© NXP B.V. 2011. All rights reserved.
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