BFR520.215 Datasheet, PDF (3/14 Pages) NXP Semiconductors – The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
R_BE = 0 
open collector
up to T_sp = 97 C
-
-
-
-
[1] _-
65
-
[1] T_sp is the temperature at the soldering point of the collector tab.
Max Unit
20
V
15
V
2.5
V
70
mA
300
mW
150
C
175
C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
R_th(j-s) thermal resistance from junction to soldering point
[1] T_sp is the temperature at the soldering point of the collector tab.
7. Characteristics
Typ Unit
[1] _{260 K/W}
Table 7. Characteristics
T_j = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
I_CBO
collector cut-off I_E = 0 A; V_CB = 6 V
current
-
-
50
nA
h_FE
DC current gain I_C = 20 mA; V_CE = 6 V
C_e
emitter
I_C = i_c = 0 A; V_EB = 0.5 V;
capacitance f = 1 MHz
60
120
250
-
1
-
pF
C_c
collector
I_E = i_e = 0 A; V_CB = 6 V;
capacitance f = 1 MHz
-
0.5
-
pF
C_re
feedback
I_C = 0 A; V_CB = 6 V;
capacitance f = 1 MHz
-
0.4
-
pF
f_T
transition
I_C = 20 mA; V_CE = 6 V;
frequency
f = 1 GHz
-
9
-
GHz
G_UM
maximum
I_C = 20 mA; V_CE = 6 V;
[1]
unilateral power T_amb = 25 C
gain
f = 900 MHz
-
15
-
dB
f = 2 GHz
-
9
-
dB
s₂₁² insertion power I_C = 20 mA; V_CE = 6 V;
13
14
-
dB
gain
T_amb = 25 C; f = 900 MHz
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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