BFR520.215 Datasheet, PDF (1/14 Pages) NXP Semiconductors – The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

BFR520
NPN 9 GHz wideband transistor
Rev. 4 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures excellent reliability.
1.3 Applications
 RF front end wideband applications in the GHz range
 Analog and digital cellular telephones
 Cordless telephones (CT1, CT2, DECT, etc.)
 Radar detectors
 Pagers and satellite TV tuners (SATV)
 Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CBO
V_CES
collector-base voltage
collector-emitter
voltage
R_BE = 0 
-
-
20
V
-
-
15
V
I_C
collector current (DC)
-
-
70
mA
P_tot
total power dissipation up to T_sp = 97 C
[1] _-
-
300 mW
h_FE
DC current gain
I_C = 20 mA; V_CE = 6 V
60
120 250
C_re
feedback capacitance I_C = i_c = 0 A; V_CB = 6 V;
-
0.4 -
pF
f = 1 MHz
f_T
transition frequency I_C = 20 mA; V_CE = 6 V;
f = 1 GHz
-
9
-
GHz
G_UM
maximum unilateral
power gain
I_C = 20 mA; V_CE = 6 V;
T_amb = 25 C
f = 900 MHz
-
15
-
dB
f = 2 GHz
-
9
-
dB