BFR520.215 Datasheet, PDF (2/14 Pages) NXP Semiconductors – The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
s₂₁² insertion power gain
I_C = 20 mA; V_CE = 6 V;
T_amb = 25 C;
f = 900 MHz
NF
noise figure
_s = _opt; T_amb = 25 C
I_C = 5 mA; V_CE = 6 V;
f = 900 MHz
I_C = 20 mA; V_CE = 6 V;
f = 900 MHz
I_C = 5 mA; V_CE = 8 V;
f = 2 GHz
[1] T_sp is the temperature at the soldering point of the collector tab.
2. Pinning information
Min Typ Max Unit
13
14
-
dB
-
1.1 1.6 dB
-
1.6 2.1 dB
-
1.9 -
dB
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Symbol
3
3
1
2
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFR520
-
plastic surface mounted package; 3 leads
4. Marking
Table 4. Marking
Type number
BFR520
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
Marking code^[1]
32*
Version
SOT23
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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