BFG520W Datasheet, PDF (7/15 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
30
handbook, halfpage
d _im
(dB)
40
MLB818
50
60
70
0
10
20
30
40
I _C (mA)
V_o = 275 mV; f_p + f_q − f_r = 793.25 MHz; V_CE = 6 V;
R_L = 75 Ω; T_amb = 25 °C.
Fig.10 Intermodulation distortion as a function
of collector current; typical values.
30
handbook, halfpage
d2
(dB)
40
MLB819
50
60
70
0
10
20
30
40
I _C (mA)
V_o = 75 mV; f_p + f_q = 810 MHz; V_CE = 6 V;
R_L = 75 Ω T_amb = 25 °C.
Fig.11 Second order intermodulation distortion as a
function of collector current; typical values.
4
handbook, halfpage
F
(dB)
3
2
1
MLB820
f = 2000 MHz
1000 MHz
900 MHz
500 MHz
0
1
10
IC (mA)
10 ²
V_CE = 6 V.
Fig.12 Minimum noise figure as a function
of collector current; typical values.
20
handbook, halfpage
G _ass
(dB)
15
10
MLB821
f = 900 MHz
1000 MHz
2000 MHz
5
0
1
10
10 ²
IC (mA)
V_CE = 6 V.
Fig.13 Associated available gain as a function
of collector current; typical values.
Rev. 04 - 21 November 2007
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