BFG520W Datasheet, PDF(4/15 Page) NXP Semiconductors

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BFG520W Datasheet, PDF (4/15 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

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NXP Semiconductors

NPN 9 GHz wideband transistors

Product speciï¬cation

BFG520W; BFG520W/X

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

hFE

Cre

GUM

|S21|2

PL1

ITO

collector-base breakdown voltage IC =10 ÂµA; IE = 0

collector-emitter breakdown voltage IC = 10 ÂµA; RBE = 0

emitter-base breakdown voltage IE = 10 ÂµA; IC = 0

2.5

collector leakage current

VCB = 6 V; IE = 0

DC current gain

feedback capacitance

IC = 20 mA; VCE = 6 V; see Fig.3 60

IC = 0; VCB = 6 V; f = 1 MHz;

see Fig.4

transition frequency

maximum unilateral power gain;

note 1

IC = 20 mA; VCE = 6 V; f = 1 GHz; â

Tamb = 25 Â°C; see Fig.5

IC = 20 mA; VCE = 6 V; f = 900 MHz; â

Tamb = 25 Â°C

IC = 20 mA; VCE = 6 V; f = 2 GHz; â

Tamb = 25 Â°C

insertion power gain

noise ï¬gure

IC = 20 mA; VCE = 6 V; f = 900 MHz; 16

Tamb = 25 Â°C

Îs = Îopt; IC = 5 mA; VCE = 6 V;

f = 900 MHz

Îs = Îopt; IC = 20 mA; VCE = 6 V;

f = 900 MHz

Îs = Îopt; IC = 5 mA; VCE = 6 V;

f = 2 GHz

output power at 1 dB gain

compression

third order intercept point

IC = 20 mA; VCE = 6 V; f = 900 MHz; â

RL = 50 â¦; Tamb = 25 Â°C

note 2

output voltage

note 3

second order intermodulation

note 4

distortion

50 nA

120 250

0.35 â

GHz

17 â

11 â

17 â

1.1 1.6 dB

1.6 2.1 dB

1.85 â

17 â

dBm

26 â

275 â

â50 â

dBm

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM

2. IC = 20 mA; VCE = 6 V; RL = 50 â¦; Tamb = 25 Â°C;

log -(---1-----â------S----1---1----S2---)-2---1(---1-2----â------S----2--2-----2---)-

dB.

fp = 900 MHz; fq = 902 MHz; measured at 2fp â fq = 898 MHz and 2fq â fp = 904 MHz.

3. dim = â60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB; RL = 75 â¦;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq â fr = 793.25 MHz.

4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 â¦; Tamb = 25 Â°C;

fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.

Rev. 04 - 21 November 2007

4 of 15

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