BFG520W Datasheet, PDF (3/15 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
T_s ≤ 85 °C; see Fig.2; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
70
500
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 85 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
180
UNIT
K/W
600
handbook, halfpage
P _tot
(mW)
400
MBG248
200
0
0
50
100
150
Ts
(^o C) ²⁰⁰
Fig.2 Power derating curve.
Rev. 04 - 21 November 2007
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