BFG520W Datasheet, PDF (12/15 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
1.016 fA
2
BF
220.1 −
3
NF
1.000 −
4
VAF
48.06 V
5
IKF
510
mA
6
ISE
283
fA
7
NE
2.035 −
8
BR
100.7 −
9
NR
0.988 −
10
VAR
1.692 V
11
IKR
2.352 mA
12
ISC
24.48 aA
13
14
15
16
17
18
19 ⁽¹⁾
20 ⁽¹⁾
21 ⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.022 −
10.00 Ω
1.000 µA
10.00 Ω
775.3 mΩ
2.210 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
1.245 pF
23
VJE
600.0 mV
24
MJE
0.258 −
25
TF
8.616 ps
26
XTF
6.788 −
27
VTF
1.414 V
28
ITF
110.3 mA
29
PTF
45.01 deg
30
CJC
447.6 fF
31
VJC
189.2 mV
32
33
34
35 ⁽¹⁾
MJC
XCJC
TR
CJS
0.070 −
0.130 −
543.7 ps
0.000 F
SEQUENCE No.
36 ⁽¹⁾
37 ⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.780 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c)
f_c = scaling frequency = 1 GHz.
Fig.22 Package equivalent circuit SOT343N.
List of components (see Fig.22)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
Rev. 04 - 21 November 2007
12 of 15