BFG520W Datasheet, PDF (2/15 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
BFG520W
BFG520W/X
CODE
N3
N4
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG520W
BFG520W/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, halfpage
4
3
1
Top view
2
MBK523
Fig.1 Simplified outline SOT343N.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
|S₂₁|²
F
collector-base voltage open emitter
−
collector-emitter voltage R_BE = 0
−
collector current (DC)
−
total power dissipation T_s ≤ 85 °C
−
DC current gain
I_C = 20 mA; V_CE = 6 V
60
feedback capacitance I_C = 0; V_CB = 6 V; f = 1 MHz
−
transition frequency
I_C = 20 mA; V_CE = 6 V; f = 1 GHz; T_amb = 25 °C −
maximum unilateral
power gain
I_C = 20 mA; V_CE = 6 V; f = 900 MHz; T_amb = 25 °C −
insertion power gain
I_C = 20 mA; V_CE = 6 V; f = 900 MHz; T_amb = 25 °C 16
noise figure
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 6 V; f = 900 MHz
−
−
20
−
15
−
70
−
500
120 250
0.35 −
9
−
17 −
V
V
mA
mW
pF
GHz
dB
17 −
dB
1.1 1.6 dB
Rev. 04 - 21 November 2007
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