PMN49EN Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PMN49EN
N-channel TrenchMOS logic level FET
10
I_D
(A)
7.5
5
2.5
10 6 5 4.5 4
003aab598
3.5
V_GS (V) = 3
200
3
R_DSon
(mΩ)
150
100
50
003aab599
V_GS (V) = 3.5
4
4.5
10
0
0
0.25
0.5
0.75
1
V_DS (V)
0
0
2.5
5
7.5
10
I_D (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
10
I_D
(A)
V_DS > I_D x R_DSon
8
003aab600
3
a
2
03al52
5
T_j = 150 °C
25 °C
1
3
0
0
1
2
3
4
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMN49EN_1
Product data sheet
Rev. 01 — 13 April 2007
© NXP B.V. 2007. All rights reserved.
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