PMN49EN Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PMN49EN
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
PMN49EN
SC-74
plastic surface-mounted package (TSOP6); 6 leads
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
drain-source voltage
drain-gate voltage (DC)
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_sp = 25 °C; V_GS = 10 V; see Figure 2 and 3
T_sp = 100 °C; V_GS = 10 V; see Figure 2
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_sp = 25 °C; see Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
I_SM
peak source current
T_sp = 25 °C
T_sp = 25 °C; pulsed; t_p ≤ 10 µs
Version
SOT457
Min
Max Unit
-
30
V
-
30
V
-
±20
V
-
4.6
A
-
2.9
A
-
18.4 A
-
1.75 W
−55
+150 °C
−55
+150 °C
-
1.4
A
-
5.6
A
PMN49EN_1
Product data sheet
Rev. 01 — 13 April 2007
© NXP B.V. 2007. All rights reserved.
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