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| PMN49EN Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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NXP Semiconductors
PMN49EN
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS
drain leakage current
IGSS
RG
RDSon
gate leakage current
gate resistance
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS
gate-source charge
QGD
gate-drain charge
VGS(pl) gate-source plateau voltage
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
Ciss
input capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = â55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
f = 1 MHz; VGSS(AC) = 150 mV
VGS = 10 V; ID = 2 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 1.5 A; see Figure 6 and 8
ID = 3 A; VDS = 15 V; VGS = 4.5 V;
see Figure 11 and 12
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
VGS = 0 V; VDS = 0 V; f = 1 MHz
VDS = 15 V; RL = 15 â¦; VGS = 10 V; RG = 6 â¦
IS = 1.5 A; VGS = 0 V; see Figure 13
IS = 2 A; dIS/dt = â100 A/µs; VGS = 0 V
Min Typ Max Unit
30 -
-
V
27 -
-
V
1
1.5 2
V
0.6 -
-
V
-
-
2.2 V
-
-
1
µA
-
-
100 µA
-
10 100 nA
-
1.9 -
â¦
-
40 47 mâ¦
-
68 80 mâ¦
-
49 60 mâ¦
-
8.8 -
nC
-
1.1 -
nC
-
1.6 -
nC
-
2.83 -
V
-
350 -
pF
-
100 -
pF
-
64.1 -
pF
-
570 -
pF
-
4.1 -
ns
-
4.3 -
ns
-
12.9 -
ns
-
4.9 -
ns
-
0.79 1.2 V
-
19.25 -
ns
-
0.73 -
nC
PMN49EN_1
Product data sheet
Rev. 01 â 13 April 2007
© NXP B.V. 2007. All rights reserved.
5 of 12
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