PMEM4020ND Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module

NXP Semiconductors
NPN transistor/Schottky-diode module
Product data sheet
PMEM4020ND
GRAPHICAL DATA
handbook¹, ⁰h³alfpage
IF
(mA)
10²
(1) (2)
(3)
10
MLE230
1
0
100
200
300
400
500
VF (mV)
Schottky barrier diode.
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
10⁵
handbook, halfpage
IR
(µA)
10⁴
10³
10²
10
MHC312
(1)
(2)
(3)
1
0
5
10
15
20
25
VR (V)
Schottky barrier diode.
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook,⁸h⁰alfpage
Cd
(pF)
60
MHC313
40
20
0
0
5
10
15
20
VR (V)
Schottky barrier diode; f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1000
handbook, halfpage
hFE
(1)
800
MHC077
600
(2)
400
(3)
200
010_−1
1
10
NPN transistor; V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.5 DC current gain as a function of collector
current; typical values.
2003 Nov 10
6