PMEM4020ND Datasheet, PDF (3/11 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module

NXP Semiconductors
NPN transistor/Schottky-diode module
Product data sheet
PMEM4020ND
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
NPN transistor
V_CBO
V_CEO
V_EBO
I_C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
open base
open collector
note 1
note 2
note 3
I_CM
peak collector current
I_BM
peak base current
P_tot
total power dissipation
T_j
junction temperature
T_s ≤ 55 °C; note 4
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 2
T_amb ≤ 25 °C; note 3
T_s ≤ 55 °C; note 4
Schottky barrier diode
V_R
continuous reverse voltage
I_F
continuous forward current
I_FSM
non-repetitive peak forward current t = 8.3 ms square wave
P_tot
total power dissipation
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 2
T_amb ≤ 25 °C; note 3
T_s ≤ 55 °C; note 4
T_j
junction temperature
note 2
Combined device
P_tot
T_stg
T_amb
total power dissipation
storage temperature
operating ambient temperature
T_amb = 25 °C; note 2
note 2
−
40
V
−
40
V
−
5
V
−
0.95
A
−
1.30
A
−
1.65
A
−
2.0
A
−
3
A
−
1
A
−
295
mW
−
400
mW
−
500
mW
−
1000 mW
−
150
°C
−
20
V
−
1
A
−
5
A
−
295
mW
−
400
mW
−
500
mW
−
1000 mW
−
150
°C
−
600
mW
−65
+150 °C
−65
+150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and
cathode both 1 cm².
3. Device mounted on a ceramic printed-circuit board, single-sided copper; tinplated; standard footprint.
4. Solder point of collector or cathode tab.
2003 Nov 10
3