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PMEM4020ND Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module
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NXP Semiconductors
NPN transistor/Schottky-diode module
Product data sheet
PMEM4020ND
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
NPN transistor
ICBO
ICEO
IEBO
hFE
VCEsat
VBEsat
RCEsat
VBEon
fT
Cc
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
current gain (DC)
collector-emitter saturation voltage
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
VCB = 40 V; IE = 0
VCB = 40 V; IE = 0; Tamb = 150 °C
VCE = 30 V; IB = 0
VEB = 5 V; IC = 0
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
VCE = 5 V; IC = 2 A; note 1
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 200 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA; note 1
VCE = 5 V; IC = 1 A
IC = 50 mA; VCE = 10 V;
f = 100 MHz
collector capacitance
VCB = 10 V; IE = 0; ie = 0;
f = 1 MHz
Schottky barrier diode
VF
continuous forward voltage
IR
reverse current
Cd
diode capacitance
see Fig.2; note 1
IF = 10 mA
IF = 100 mA
IF = 1000 mA
see Fig.3; note 1
VR = 5 V
VR = 8 V
VR = 15 V
VR = 5 V; f = 1 MHz; see Fig.4
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
50 µA
−
−
100 nA
−
−
100 nA
300 −
−
300 −
900
200 −
−
75 −
−
−
−
75 mV
−
−
100 mV
−
−
190 mV
−
−
400 mV
−
−
1.2 V
−
150 190 mΩ
−
−
1.1 V
150 −
−
MHz
−
−
10 pF
−
240 270 mV
−
300 350 mV
−
480 550 mV
−
5
10 µA
−
7
20 µA
−
10 50 µA
−
19 25 pF
2003 Nov 10
5
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