PMEM4020ND Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module

NXP Semiconductors
NPN transistor/Schottky-diode module
Product data sheet
PMEM4020ND
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Single device
R_{th j-s}
thermal resistance from junction to
solder point
R_{th j-a}
thermal resistance from junction to
ambient
Combined device
R_{th j-a}
thermal resistance from junction to
ambient
CONDITIONS
in free air; notes 1 and 2
in free air; notes 1 and 3
in free air; notes 1 and 4
in free air; notes 1 and 5
in free air; notes 1 and 3
VALUE
UNIT
95
K/W
250
K/W
315
K/W
425
K/W
208
K/W
Notes
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
P_R are a significant part of the total power losses. Nomograms for determination of the reverse power losses P_R and
I_F (AV) rating will be available on request.
2. Solder point of collector or cathode tab.
3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; mounting pad for collector and
cathode 1 cm²/each.
5. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2003 Nov 10
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