PMEM4020ND Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module

NXP Semiconductors
NPN transistor/Schottky-diode module
Product data sheet
PMEM4020ND
FEATURES
• 600 mW total power dissipation
• High current capability
• Reduces required PCB area
• Reduced pick and place costs
• Small plastic SMD package.
Transistor:
• Low collector-emitter saturation voltage.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
emitter
not connected
cathode
anode
base
collector
Diode:
• Ultra high-speed switching
• Very low forward voltage
• Guard ring protected.
APPLICATIONS
• DC-to-DC converters
• Inductive load drivers
• MOSFET drivers.
DESCRIPTION
Combination of an NPN transistor with low V_CEsat and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4020PD.
handbook, halfpage 6
5
4
1 23
4
3
6
5
1
MGU865
Marking code: B6.
Fig.1 Simplified outline (SOT457) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PMEM4020ND
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT457
2003 Nov 10
2