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| PHPT610030PK Datasheet, PDF (6/15 Pages) NXP Semiconductors – PNP/PNP high power double bipolar transistor | |||
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NXP Semiconductors
PHPT610030PK
PNP/PNP high power double bipolar transistor
Symbol
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Cc
500
hFE
400
300
200
100
Parameter
Conditions
collector-emitter
saturation resistance
IC = -2 A; IB = -0.2 A; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
base-emitter turn-on
voltage
delay time
rise time
VCE = -2 V; IC = -100 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
-
110 180 mΩ
-
-0.91 -1
V
-
-1.02 -1.2 V
-
-0.68 -0.9 V
-
20
-
ns
-
180 -
ns
-
200 -
ns
-
350 -
ns
-
220 -
ns
-
570 -
ns
-
125 -
MHz
-
30
-
pF
aaa-010858
(1)
(2)
(3)
-2.5
-45
IC
(A)
-40
-2.0 -35
-30
-1.5
-1.0
-0.5
IB = -50 mA
aaa-010859
-25
-20
-15
-10
-5
0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = â10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
0
0
-1
-2
-3
-4
-5
VCE (V)
Tamb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT610030PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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