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| PHPT610030PK Datasheet, PDF (5/15 Pages) NXP Semiconductors – PNP/PNP high power double bipolar transistor | |||
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NXP Semiconductors
102
duty cycle = 1
Zth(j-a)
(K/W)
10
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
1 0.01
0
PHPT610030PK
PNP/PNP high power double bipolar transistor
aaa-014343
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = -80 V; IE = 0 A; Tamb = 25 °C
current
VCB = -80 V; IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
IEBO
emitter-base cut-off
VEB = -7 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
VCE = -10 V; IC = -1 A; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
VCE = -10 V; IC = -2 A; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
VCE = -10 V; IC = -3 A; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
150 220 -
80
210 -
20
100 -
10
40
-
-
-70 -110 mV
-
-220 -360 mV
PHPT610030PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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