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PHPT610030PK Datasheet, PDF (4/15 Pages) NXP Semiconductors – PNP/PNP high power double bipolar transistor
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NXP Semiconductors
PHPT610030PK
PNP/PNP high power double bipolar transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Min Typ Max Unit
[1]
-
-
150 K/W
[2]
-
-
62.5 K/W
-
-
6
K/W
[1]
-
-
120 K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
1
0
aaa-014342
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PHPT610030PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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