PHPT610030PK Datasheet, PDF (3/15 Pages) NXP Semiconductors – PNP/PNP high power double bipolar transistor

NXP Semiconductors
PHPT610030PK
PNP/PNP high power double bipolar transistor
Symbol
P_tot
Per device
P_tot
T_j
T_amb
T_stg
Parameter
total power dissipation
Conditions
T_amb ≤ 25 °C
Min Max Unit
[1]
-
1
W
[2]
-
2.4 W
[3]
-
25
W
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1]
-
1.25 W
[2]
-
3
W
[4]
-
5
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm}²_.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
4
P_tot
(W)
3
aaa-014341
(1)
2
1
(2)
0
-75
0
75
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Per transistor: power derating curves
150
225
T_amb (°C)
PHPT610030PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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