PHPT610030PK Datasheet, PDF (1/15 Pages) NXP Semiconductors – PNP/PNP high power double bipolar transistor

PHPT610030PK
PNP/PNP high power double bipolar transistor
22 October 2014
Product data sheet
1. General description
PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package.
NPN/NPN complement: PHPT610030NK.
NPN/PNP complement: PHPT610030NPK.
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Motor control
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
V_CEO
collector-emitter
voltage
I_C
collector current
Per transistor
R_CEsat
collector-emitter
saturation resistance
Conditions
open base
I_C = -2 A; I_B = -0.2 A; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
-
-100 V
-
-
-3
A
-
110 180 mΩ
Scan or click this QR code to view the latest information for this product