PHP225_11 Datasheet, PDF (6/11 Pages) NXP Semiconductors – Dual P-channel intermediate level FET

NXP Semiconductors
PHP225
Dual P-channel intermediate level FET
10⁴
mda165
1.2
k
1.1
R_DSon
(mΩ)
(1)(2)(3)(4) (5)
1.0
10³
0.9
mbe138
0.8
0.7
10²
0
−2
−4
−6
−8
−10
V_GS (V)
0.6
−50
0
50
100
150
T_j (°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Temperature coefficient of gate-source
of drain current; P-channel; typical values
threshold voltage
1.8
mbe146
−6
mbe156
k
I_S
1.6
(1)
(A)
1.4
(2)
−4
1.2
(1) (2)
(3)
1.0
−2
0.8
0.6
−50
0
50
100
150
T_j (°C)
0
0
−0.5
−1
−1.5
−2
V_SD (V)
Fig 9. Temperature coefficient of drain-source
on-state resistance; P-channel
Fig 10. Source current as a function of source-drain
voltage
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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