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PHP225_11 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Dual P-channel intermediate level FET
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NXP Semiconductors
PHP225
Dual P-channel intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
Conditions
6. Characteristics
Min Typ Max Unit
-
-
35 K/W
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
IDSon
drain-source on-state
resistance
on-state drain current
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
gfs
transfer conductance
toff
turn-off time
ton
turn-on time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Conditions
ID = -10 µA; VGS = 0 V; Tj = 25 °C
ID = -1 mA; VDS = VGS; Tj = 25 °C
VDS = -24 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -1 A; Tj = 25 °C
VGS = -4.5 V; ID = -0.5 A; Tj = 25 °C
VDS = -1 V; VGS = -10 V
VDS = -5 V; VGS = -4.5 V
ID = -2.3 A; VDS = -15 V; VGS = -10 V;
Tj = 25 °C
VDS = -20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
VDS = -20 V; ID = -1 A; Tj = 25 °C
VDS = -20 V; VGS = -10 V; RG(ext) = 4.7 Ω;
RL = 20 Ω; Tj = 25 °C; ID = -1 A
IS = -1.25 A; VGS = 0 V; Tj = 25 °C
IS = -1.25 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
-30 -
-
V
-1
-
-2.8 V
-
-
-100 nA
-
-
100 nA
-
-
100 nA
-
0.22 0.25 Ω
-
0.33 0.4 Ω
-2.3 -
-
A
-1
-
-
A
-
10
25
nC
-
1
-
nC
-
3
-
nC
-
250 -
pF
-
140 -
pF
-
50
-
pF
1
2
-
S
-
50
140 ns
-
20
80
ns
-
-
-1.6 V
-
150 200 ns
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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